A review on Carbon Nanotube Field Effect Transistors

Zhenqin Du*, Eric Choi, Bowen Duanmu, Justin Warner
 
Ulink college of Beijing
No.1 Dinfu St, Xicheng District
Beijing, China
Cell:86-010-17710518586 E-mail:1161780591@qq.com
 
Abstract: 
Modern computers use silicon transistors as small as 14nm. These transistors have reached their limits. Carbon nanotubes are the speculated successor because of their advantages of electrical conductance, heat dissipation and stability. These characteristics should help reduce current limitations of silicon transistors. Implementation of carbon nanotubes is limited by manufacturing defects and impurities which, even small defects, significantly impact the efficiency of the transistor. Even differences in the interfacial thermal resistance could make current designs and materials obsolete.
 
Keywords: 

CNT, FET, quantum tunneling, MOSFET, CNTFET

pages: 

143-146

DOI: 

10.35745/icice2018v2.036

Year: 

2018

Published in: 

2nd International Conference on Information, Communication and Engineering (ICICE 2018)

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