Total-ionizing-dose-induced body shielding effect in 130 nm T-gate PDSOI I/O nMOSFETs

Xin Xie1,2,*, Dawei Bi1, Zhiuyuan Hu1, Zhengxuan Zhang1, Shichang Zou1
 
1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,
Chinese Academy of Sciences
865 Changning Road, Shanghai, China
2 University of Chinese Academy of Sciences
No.19(A) Yuquan Road, Shijingshan District, Beijing, China
*17740838540, xiexin@mail.sim.ac.cn
 
Abstract: 
This paper investigates total-ionizing-dose-induced body shielding effect in 130 nm T-gate partially-depleted SOI I/O nMOSFETs. As total ionizing dose increases, the body effect is useless to control the threshold voltage. A body neck pinchoff model is proposed to interpret that phenomenon. During irradiation under PG bias, high electric field is built in the buried oxide under the body neck region. Hence, more radiation-induced positive charges are trapped in the buried oxide under the body neck region. Then, the body neck region will be fully depleted. That is to say, the body neck will be pinched off as total ionizing dose increases. As a result, the body contact is shield. And the method using body voltage to control the threshold voltage does not work.
 
Keywords: 

body effect, shielding effect, silicon on insulator, total ionizing dose

pages: 

35-38

DOI: 

10.35745/icice2018v2.009

Year: 

2018

Published in: 

2nd International Conference on Information, Communication and Engineering (ICICE 2018)

Full paper download: 
PDF icon 35-38.pdf