Total-ionizing-dose-induced body shielding effect in 130 nm T-gate PDSOI I/O nMOSFETs
This paper investigates total-ionizing-dose-induced body shielding effect in 130 nm T-gate partially-depleted SOI I/O nMOSFETs. As total ionizing dose increases, the body effect is useless to control the threshold voltage. A body neck pinchoff model is proposed to interpret that phenomenon. During irradiation under PG bias, high electric field is built in the buried oxide under the body neck region. Hence, more radiation-induced positive charges are trapped in the buried oxide under the body neck region. Then, the body neck region will be fully depleted. That is to say, the body neck will be pinched off as total ionizing dose increases. As a result, the body contact is shield. And the method using body voltage to control the threshold voltage does not work.
body effect, shielding effect, silicon on insulator, total ionizing dose
2nd International Conference on Information, Communication and Engineering (ICICE 2018)
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