The Degradation Induced by Hot-Carrier Injection in 130-nm Partially Depleted SOI pMOSFETs Fabricated on Modified Wafer

Huilong Zhu^{1, 2, a}, Dawei Bi^{1, b, *}, Zhiyuan Hu^{1, c}, Xin Xie^{1, 2, d}, Zhengxuan Zhang^{1, e}, Shichang Zou^{1, f}

 

¹State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,

Chinese Academy of Sciences, Shanghai 20050，China

²University of Chinese Academy of Sciences, Beijing 10004, China

^azhuhuilong@mail.sim.ac.cn, ^bdavidb@mail.sim.ac.cn, ^czyhu@mail.sim.ac.cn,

^dxiexin@mail.sim.ac.cn, ^ezxzhang@mail.sim.ac.cn, ^fzsc@mail.sim.ac.cn

 

Abstract: 

The hot carrier effect of 130-nm partially depleted SOI pMOSFETs fabricated on wafer modified by silicon ions implantation is reported in this paper. Due to the electron traps in the buried oxide, the degradation induced by hot-carrier injection is anomalous. Specifically, at low Vg stress, the positive degradation of modified pMOSFETs is faster and more serious than control devices, and huge leakage current is found after a period of stress time. Moreover, at a Vg = Vd stress, the control pMOSFETs present lightly negative degradation, while the modified pMOSFETs present enormous positive degradation. Finally, a reasonable interpretation is proposed that the deep electron traps in the buried oxide can capture hot electrons during the stress, which will cause the back channel exhausted even inversed and enhance the coupling effect between the front gate and the back gate.

 

Keywords: 

Hot-carrier effects, PD-SOI, pMOSFETs, silicon ions implantation

pages: 

43-46

DOI: 

10.35745/icice2018v2.011

Year: 

2018

Published in: 

2nd International Conference on Information, Communication and Engineering (ICICE 2018)

Full paper download: 

43-46.pdf