The electrical performance of different channel thicknesses for IGZO thin film transistors

Kao-Peng Min, Yu-Rong Lin and Shih-Chang Shei
 
Department of Electrical Engineering, National University of Tainan, Taiwan
Address: 33, Sec. 2, Shu-Lin St., Tainan 700, Taiwan
 
Abstract: 
In this study, the I-V properties of bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs) with different thicknesses of active-layer had been investigated. IGZO TFTs with variations in the IGZO layer thickness were deposited on bottom-gate-configuration SiNX/glass substrates at 25 °C using radio frequency magnetron sputtering. We deposited the IGZO thicknesses with the range from 35 to 75 nm, and the ratio of gate width and gate length was 10. We found that the performance of devices was its thickness dependence. The best performance of IGZO TFT was found when the channel layer thickness was 50 nm, and it shows a threshold voltage of 5.18 V, a field-effect mobility in the saturation region of 0.21 cm2/Vs, a subthreshold swing of 0.15 V/dec, and an Ion/Ioff ratio is about 5.5×105.
 
Keywords: 

InGaZnO, thin-film transistor, active-layer thickness

pages: 

135-138

DOI: 

10.35745/icice2018v2.034

Year: 

2018

Published in: 

2nd International Conference on Information, Communication and Engineering (ICICE 2018)

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